3D00500 - SEMI 3D5 - Guide for Metrology Techniques to be Used in Measurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures StdTpc-Chemical & Gas Distribution Systems specifications

specifications

which denotes small areas of imperfection of the otherwise flat wafer or substrate

tetrakis(dimethylamino) hafnium

The glass substrate is in shape of a wafer (round) or a panel (square or rectangular)

If differences should exist between the English version and a translation in any other language

3D00500 - SEMI 3D5 - Guide for Metrology Techniques to be Used in Measurement of Geometrical Parameters of Through-Silicon Vias (TSVs) in 3DS-IC Structures StdTpc-Chemical & Gas Distribution Systems specificationsThis Guide will assist the user in selection and use of tools for performing measurements of geometrical parameters of an individual through silicon via (TSV), or of an array of TSVs. TSVs are expected to be a critical element in future three dimensional stacked integrated circuit (3DS IC) packaging. Advanced TSV designs with higher aspect ratios and smaller diameters may challenge TSV metrology techniques. This Guide will address the various